Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12)
- Авторы: Tairov B.1, Gasanova X.1, Selim-zade R.1
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Учреждения:
- Abdullaev Institute of Physics
- Выпуск: Том 50, № 8 (2016)
- Страницы: 996-1000
- Раздел: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197544
- DOI: https://doi.org/10.1134/S1063782616080248
- ID: 197544
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Аннотация
The temperature dependences of the Fermi level, concentrations of charge carriers, and their effective mass ratio in the Bi1–xSbx system (x = 0.06, 0.12) are determined on the basis of quantitative analysis of the temperature dependence of the Hall coefficient in the temperature range of 77–300 K.
Об авторах
B. Tairov
Abdullaev Institute of Physics
Автор, ответственный за переписку.
Email: btairov@physics.ab.az
Азербайджан, Baku, Az-1143
X. Gasanova
Abdullaev Institute of Physics
Email: btairov@physics.ab.az
Азербайджан, Baku, Az-1143
R. Selim-zade
Abdullaev Institute of Physics
Email: btairov@physics.ab.az
Азербайджан, Baku, Az-1143