Enviar artigo por via de e-mail Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12)
- Autores: Tairov B.1, Gasanova X.1, Selim-zade R.1
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Afiliações:
- Abdullaev Institute of Physics
- Edição: Volume 50, Nº 8 (2016)
- Páginas: 996-1000
- Seção: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197544
- DOI: https://doi.org/10.1134/S1063782616080248
- ID: 197544
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Resumo
The temperature dependences of the Fermi level, concentrations of charge carriers, and their effective mass ratio in the Bi1–xSbx system (x = 0.06, 0.12) are determined on the basis of quantitative analysis of the temperature dependence of the Hall coefficient in the temperature range of 77–300 K.
Sobre autores
B. Tairov
Abdullaev Institute of Physics
Autor responsável pela correspondência
Email: btairov@physics.ab.az
Azerbaijão, Baku, Az-1143
X. Gasanova
Abdullaev Institute of Physics
Email: btairov@physics.ab.az
Azerbaijão, Baku, Az-1143
R. Selim-zade
Abdullaev Institute of Physics
Email: btairov@physics.ab.az
Azerbaijão, Baku, Az-1143
