| Шығарылым |
Атауы |
Файл |
| Том 48, № 7 (2019) |
Automation of the Measurement Process of the Parameters of the Sensitive Elements of the Gas Flow Rate Sensors |
(Eng)
|
|
Ryabov V., Djuzhev N., Novikov D.
|
| Том 48, № 6 (2019) |
Creation and Development of the Ion Beam Technology |
(Eng)
|
|
Maishev Y.
|
| Том 48, № 6 (2019) |
Parameters of Plasma and Way of Etching Silicon in a CF4 + CHF3 + O2 Mixture |
(Eng)
|
|
Efremov A., Murin D., Kwon K.
|
| Том 48, № 6 (2019) |
Simulation of the Effect of the Grain Boundary Structure on Effective Ionic Charges in the Processes of Electromigration |
(Eng)
|
|
Makhviladze T., Sarychev M.
|
| Том 48, № 6 (2019) |
Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger Elements |
(Eng)
|
|
Stenin V., Katunin Y.
|
| Том 48, № 6 (2019) |
Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region |
(Eng)
|
|
Masal’skii N.
|
| Том 48, № 6 (2019) |
Effect of the Pressure of Oxygen on the Plasma Oxidation of the Titanium Nitride Surface |
(Eng)
|
|
Mordvintsev V., Naumov V., Simakin S.
|
| Том 48, № 6 (2019) |
Estimating the Electric Mode Effect (Active and Passive) on the Dose of Radiation Resistance of Microcircuits |
(Eng)
|
|
Kalashnikov O.
|
| Том 48, № 6 (2019) |
Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects |
(Eng)
|
|
Chernyak M., Ranneva E., Ulanova A., Nikiforov A., Verizhnikov A., Tsyrlov A., Fedosov V., Shchepanov A., Kalashnikov V., Titovets D.
|
| Том 48, № 6 (2019) |
Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields |
(Eng)
|
|
Asadov S., Mustafaeva S., Lukichev V.
|
| Том 48, № 6 (2019) |
A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer |
(Eng)
|
|
Filali W., Garoudja E., Oussalah S., Mekheldi M., Sengouga N., Henini M.
|
| Том 48, № 5 (2019) |
Study of the Effect of Technetium as a Component of the Catalysts of the REE Compounds on the Process of Decomposition of Monohydrides of Silicon and Germanium |
(Eng)
|
|
Kovalevskiy A., Strogova A., Kusnetsov D., Voronets Y., Gran’ko S.
|
| Том 48, № 5 (2019) |
Single-Electron Transistor Based on a Linear Structure of Three Electrically and Optically Controlled Tunnel-Coupled Quantum Dots |
(Eng)
|
|
Tsukanov A.
|
| Том 48, № 5 (2019) |
Features of the Architecture Implementing the Dataflow Computational Model and Its Application in the Creation of Microelectronic High-Performance Computing Systems |
(Eng)
|
|
Zmeev D., Klimov A., Levchenko N., Okunev A., Stempkovskii A.
|
| Том 48, № 5 (2019) |
Functional Properties and Frequency Characteristics of Low-Sensitive RC Filters Based on Micropower Operational Amplifiers |
(Eng)
|
|
Denisenko D., Prokopenko N., Ivanov Y.
|
| Том 48, № 5 (2019) |
On the Construction of Neuromorphic Fault Dictionaries for Analog Integrated Circuits |
(Eng)
|
|
Mosin S.
|
| Том 48, № 5 (2019) |
Formal Description of Digital Control System Operation and Its Use in Designing |
(Eng)
|
|
Stempkovsky A., Ivannikov A.
|
| Том 48, № 5 (2019) |
Design of a Thin-Film Thermoelectric Generator for Low-Power Applications |
(Eng)
|
|
Korotkov A., Loboda V., Dzyubanenko S., Bakulin E.
|
| Том 48, № 5 (2019) |
A New Voltage Level Shifter For Low-Power Applications |
(Eng)
|
|
Shubin V.
|
| Том 48, № 5 (2019) |
Automation of Pulse Electric Strength Test of Electronic Component Base |
(Eng)
|
|
Dyatlov N., Epifantsev K., Skorobogatov P.
|
| Том 48, № 4 (2019) |
Effect of the Composition on the Dielectric Properties and Charge Transfer in 2D GaS1 –хSeх Materials |
(Eng)
|
|
Asadov S., Mustafaeva S., Lukichev V., Guseinov D.
|
| Том 48, № 4 (2019) |
Estimating the Interrelation between the Rate of Atomic Layer Deposition of Thin Platinum-Group Metal Films and the Molecular Mass of Reactant Precursors |
(Eng)
|
|
Vasilyev V.
|
| Том 48, № 4 (2019) |
Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method |
(Eng)
|
|
Fadeev A., Rudenko K.
|
| Том 48, № 4 (2019) |
Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge |
(Eng)
|
|
Ezhovskii Y., Mikhailovskii S.
|
| Том 48, № 4 (2019) |
The Effect of an N2 Additive on the GaAs Etching Rate in CF2Cl2 Plasma |
(Eng)
|
|
Pivovarenok S.
|
| Нәтижелер 328 - 26/50 |
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