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Photosensitive heterostructures based on porous nanocrystalline silicon
Latukhina N.V., Rogozhin A.S., Saed S., Chepurnov V.I.
The development of a purification technique of metallurgical silicon to silicon of the solar brand
Maronchuk I.I., Maronchuk I.E., Sanikovich D.D., Shirokov I.B.
Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge
Ezhovskii Y.K., Mikhailovskii S.V.
Formation of three-dimensional structures in the silicon carbide substrates by plasma-chemical etching
Seidman L.A.
An Integrated High-Capacitance Varicap Based on Porous Silicon
Timoshenkov S.P., Boyko A.N., Gaev D.S., Kalmykov R.M.
Analysis of the technological characteristics in fabricating SOI MEMS transducers
Parfenov N.M.
Analysis and Simulation of Vertical Complementary Silicon Bipolar Transistors
Hrapov M.O., Gridchin V.A., Kalinin S.V.
High efficiency photoelectrodes based on porous silicon
Tynyshtykbayev K.B., Glazman V.B., Muratov D.A., Rakhmetov B.A., Tokmoldin N.S., Tokmoldin S.Z.
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology
Boruzdina A.B., Gerasimov Y.M., Grigor’ev N.G., Kobylyatskii A.V., Ulanova A.V., Shvetsov-Shilovskii I.I.
Directed crystallization of multicrystalline silicon under weak melt convection and gas exchange
Gonik M.A.
Microconsuming 8–12 GHz GaN Power Amplifiers
Gamkrelidze S.A., Gnatyuk D.L., Zuev A.V., Maitama M.V., Mal’tsev P.P., Mikhalev A.O., Fedorov Y.V.
The nature of thermoacceptors in electron-irradiated high-resistance silicon
Kobeleva S.P.
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