Russian Microelectronics
ISSN 1063-7397 (Print)
ISSN 1608-3415 (Online)
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Keywords
ADC
DAC
GaAs
MIS varicap
RUSSIAN Microelectronics
atomic force microscopy
compaction in a magnetic field
ferroelectrics
gallium arsenide
gallium nitride
heterostructure
heterostructures
interface
leakage current
magnetic texture
phase shifter
porous silicon
recrystallization
silicon carbide
varicap
zirconia
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Keywords
ADC
DAC
GaAs
MIS varicap
RUSSIAN Microelectronics
atomic force microscopy
compaction in a magnetic field
ferroelectrics
gallium arsenide
gallium nitride
heterostructure
heterostructures
interface
leakage current
magnetic texture
phase shifter
porous silicon
recrystallization
silicon carbide
varicap
zirconia
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Author Details
Author Details
Pivovarenok, S. A.
Issue
Section
Title
File
Vol 45, No 5 (2016)
Article
Kinetics of the interaction between a CCl
2
F
2
radio-frequency discharge and gallium arsenide
Vol 46, No 3 (2017)
Article
Effect of Ar and He additives on the kinetics of GaAs etching in CF
2
Cl
2
plasma
Vol 46, No 4 (2017)
Article
Effect of the mixture composition on the electrophysical parameters and emission spectra of CF
2
Cl
2
/Ar and CF
2
Cl
2
/He plasma
Vol 47, No 1 (2018)
Article
Visualization of Defects on the Semiconductor Surface Using a Dielectric Barrier Discharge
Vol 47, No 4 (2018)
Article
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N
2
Plasma
Vol 48, No 4 (2019)
Article
The Effect of an N
2
Additive on the GaAs Etching Rate in CF
2
Cl
2
Plasma
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