| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 46, № 1 (2017) |
Article |
Two-view tomography of low-temperature plasma |
|
| Том 46, № 6 (2017) |
Article |
Electromagnetic Modeling, Technology, and Production of Microwave C3MOSHFET Switches on AlGaN/GaN Heterostructures |
|
| Том 47, № 1 (2018) |
Article |
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm |
|
| Том 47, № 3 (2018) |
Article |
Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes |
|
| Том 47, № 5 (2018) |
Article |
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation |
|
| Том 47, № 5 (2018) |
Article |
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension |
|
| Том 48, № 2 (2019) |
Article |
Influence of Pulsed Laser Deposition Modes on Properties of Nanocrystalline LiNbO3 Films |
|
| Том 48, № 4 (2019) |
Article |
Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method |
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