Том 52, № 3 (2023)
ДИАГНОСТИКА
Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates
Аннотация
The production of superlattices with pseudomorphically strained quantum wells (QWs) {InxGa1–xAs/GaAs} grown by molecular beam epitaxy on GaAs substrates with (100), (110), and (111)A crys-tallographic surface orientations is reported. The quality of the crystal structure of epitaxial samples is assessed using the atomic force microscopy of their surface. The manifestation of a piezoelectric field in the photoluminescence spectra is reported.
КВАНТОВЫЕ ТЕХНОЛОГИИ
Precise Tomography of Qudits
Аннотация
Multilevel quantum states (qudits) represent a promising platform for scalable quantum comput-ing. In this paper, we present a method for precisely controlling such systems using fuzzy quantum measure-ments. The developed method is used for a precise reconstruction of quantum states under conditions of a significant effect of decoherence and quantum noise. Protocols for quantum measurements based on mutu-ally unbiased bases (MUBs) of various dimensions are considered. The accuracy characteristics of sets of ran-dom states uniformly distributed with respect to the Haar measure are studied.
Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots
Аннотация
A scheme is proposed for converting a transport photonic qubit into a stationary qubit represented by the electronic states of quantum dots (QDs). The choice of the basis states of a qubit in the form of anti-symmetric combinations of the excited states of an array of QDs ensures their stability with respect to pho-ton/phonon relaxation processes. The formation of these states is due to the Stark and Förster interactions between electrons localized in the QDs. An algorithm for the controlled transformation (recording) of a pho-ton state into the electronic states of QDs using optical and electrostatic fields is considered. The possibility of tuning the frequency of the electronic transitions in the QDs in a gallium arsenide nanostructure using metal gates and a charged cantilever needle is studied.
МОДЕЛИРОВАНИЕ
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor
Аннотация
This paper studies the design of a nonlinear model of AlGaAs/InGaAs/GaAs рHEMT micro-wave-frequency range transistors with a gate length of 0.15 μm using parametric analysis methods. In the cal-culations, not only nonlinear current sources but also the dependences of the nonlinear gate-source and gate-drain capacitances on voltages are studied. It is shown that the proposed model makes it possible to describe the IV characteristics of the studied device adequately in the range of drain currents from 0 to 100 mA and the frequency range from 5 to 45 GHz. The error of the model does not exceed 3%
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery
Аннотация
Based on the density functional theory (DFT) with allowance for spin polarization or the local spin density approximation (LSDA), we calculate the adsorption and diffusion properties of a lithium atom on a graphene ( ) monolayer with monovacancy ( ) as the anode material for an -ion battery. The DFT LSDA calculations are performed in relaxed 5 × 5 and 6 × 6 supercells and based on graphene with the monovacancy + lithium adatom complex . Based on the calculated values of the adsorption energy of the lithium atom , the energetically stable location of the lithium adatom is determined on a monolayer of supercells in and . The calculation results show that the adatom energetically prefers to be adsorbed in the pit position (H-site) rather than adsorbed from above (T-site) of the carbon atom in the monolayer. The DFT LSDA calculated electronic band structure and local total and partial magnetic moment of supercell atoms are consistent with the calculations performed by the generalized gradient approximation (GGA)-PBE functional for the H-, B-, and T-sites of graphene. Taking into account the experimentally obtained diffusion coefficients of lithium in two-layer graphene in the struc-tural packing of an AB package and the temperature (263–333 K) dependence of Li diffusion in two-layer graphene, which is described by the Arrhenius law, the diffusion activation energy of is calculated at con-centrations of = 0.06–0.51 in LixC12 graphene in the AB packaging.
МЭМС–УСТРОЙСТВА
Fast Electrochemical Micropump for Portable Drug Delivery Module
Аннотация
Microfluidic devices are capable of precise drug delivery to the human body. For this purpose, they must be equipped with a compact pump that provides a high flow rate and precise dosing. In this paper, we present a micropump based on a fast electrochemical actuator that meets these requirements. It contains three actuators operating in the peristaltic mode. The device is fabricated from glass and silicon wafers using the standard microfabrication processes. The working part of the pump has a size of about 3 mm3, which is an order of magnitude smaller than other types of diaphragm pumps. The small size of the actuators ensures ultrahigh liquid dosing accuracy of 0.14 nL. At the same time, the high frequency of operation of the actuators makes it possible to develop a specific pumping velocity comparable to other types of pumps.
ТЕХНОЛОГИИ
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology
Аннотация
This paper presents the results of hydrogen electron-cyclotron resonance (ECR) plasma in micro-electronics technology. Its effect on the radiation resistance of the IC and on the quality of the ohmic contact during the formation of UBM metallization is demonstrated. The devices obtained with the use of plasma ECR and without it are analyzed.
УСТРОЙСТВА
Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data
Аннотация
The results of a theoretical study of the behavior of a system of nanophotonic devices, consisting of receiving and transmitting plasmonic metal antennas, are presented. Based on the finite element method, the main parameters of antennas located in the TSV channel and receiving a signal in the terahertz frequency range are calculated. The limiting range of signal transmission and the coefficient of its amplification are determined. Conclusions are drawn on the suitability of the presented configuration as a system for wireless data transmission and reception in three-dimensional integrated circuits.