A Megapixel Matrix Photodetector of the Middle Infrared Range


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Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temperature dependence of the reverse current of elements in the 125–300 K range had a characteristic Arrhenius dependence with an activation energy close to the band gap of the semiconductor and was limited by the diffusion component of the current. At a lower temperature, the current was limited by the generation of carriers with the participation of a deep level near the middle of the forbidden band. The histogram of the detectability of the elements of the matrix had the form of a symmetric curve with a maximum and an average value ≈ 1.3 × 1012 cm Hz1/2/W.

作者简介

V. Bazovkin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Varavin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Vasil’ev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Glukhov

Research and Production Enterprise JSC

编辑信件的主要联系方式.
Email: gluhov@nzpp.ru
俄罗斯联邦, Vostok, Novosibirsk, 630049

D. Gorshkov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

S. Dvoretsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Kovchavtsev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

Yu. Makarov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

D. Marin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

I. Mzhelsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Polovinkin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Remesnik

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

I. Sabinina

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

Yu. Sidorov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

G. Sidorov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Stroganov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Tsarenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

M. Yakushev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Latyshev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

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