A Megapixel Matrix Photodetector of the Middle Infrared Range
- 作者: Bazovkin V.M.1, Varavin V.S.1, Vasil’ev V.V.1, Glukhov A.V.2, Gorshkov D.V.1, Dvoretsky S.A.1, Kovchavtsev A.P.1, Makarov Y.S.1, Marin D.V.1, Mzhelsky I.V.1, Polovinkin V.G.1, Remesnik V.G.1, Sabinina I.V.1, Sidorov Y.G.1, Sidorov G.Y.1, Stroganov A.S.1, Tsarenko A.V.1, Yakushev M.V.1, Latyshev A.V.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Research and Production Enterprise JSC
- 期: 卷 64, 编号 9 (2019)
- 页面: 1011-1015
- 栏目: Article
- URL: https://journals.rcsi.science/1064-2269/article/view/201223
- DOI: https://doi.org/10.1134/S1064226919090043
- ID: 201223
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详细
Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temperature dependence of the reverse current of elements in the 125–300 K range had a characteristic Arrhenius dependence with an activation energy close to the band gap of the semiconductor and was limited by the diffusion component of the current. At a lower temperature, the current was limited by the generation of carriers with the participation of a deep level near the middle of the forbidden band. The histogram of the detectability of the elements of the matrix had the form of a symmetric curve with a maximum and an average value ≈ 1.3 × 1012 cm Hz1/2/W.
作者简介
V. Bazovkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Vasil’ev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Glukhov
Research and Production Enterprise JSC
编辑信件的主要联系方式.
Email: gluhov@nzpp.ru
俄罗斯联邦, Vostok, Novosibirsk, 630049
D. Gorshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
Yu. Makarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
D. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
I. Mzhelsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Polovinkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
I. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Stroganov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Tsarenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
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