Отправить статью по E-mail A Megapixel Matrix Photodetector of the Middle Infrared Range
- Авторы: Bazovkin V.1, Varavin V.1, Vasil’ev V.1, Glukhov A.2, Gorshkov D.1, Dvoretsky S.1, Kovchavtsev A.1, Makarov Y.1, Marin D.1, Mzhelsky I.1, Polovinkin V.1, Remesnik V.1, Sabinina I.1, Sidorov Y.1, Sidorov G.1, Stroganov A.1, Tsarenko A.1, Yakushev M.1, Latyshev A.1
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Research and Production Enterprise JSC
- Выпуск: Том 64, № 9 (2019)
- Страницы: 1011-1015
- Раздел: Article
- URL: https://journals.rcsi.science/1064-2269/article/view/201223
- DOI: https://doi.org/10.1134/S1064226919090043
- ID: 201223
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Аннотация
Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temperature dependence of the reverse current of elements in the 125–300 K range had a characteristic Arrhenius dependence with an activation energy close to the band gap of the semiconductor and was limited by the diffusion component of the current. At a lower temperature, the current was limited by the generation of carriers with the participation of a deep level near the middle of the forbidden band. The histogram of the detectability of the elements of the matrix had the form of a symmetric curve with a maximum and an average value ≈ 1.3 × 1012 cm Hz1/2/W.
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Об авторах
V. Bazovkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Vasil’ev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Glukhov
Research and Production Enterprise JSC
Автор, ответственный за переписку.
Email: gluhov@nzpp.ru
Россия, Vostok, Novosibirsk, 630049
D. Gorshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
Yu. Makarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
D. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
I. Mzhelsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Polovinkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
I. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Stroganov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Tsarenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Россия, Novosibirsk, 630090
