A Megapixel Matrix Photodetector of the Middle Infrared Range


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Abstract

Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temperature dependence of the reverse current of elements in the 125–300 K range had a characteristic Arrhenius dependence with an activation energy close to the band gap of the semiconductor and was limited by the diffusion component of the current. At a lower temperature, the current was limited by the generation of carriers with the participation of a deep level near the middle of the forbidden band. The histogram of the detectability of the elements of the matrix had the form of a symmetric curve with a maximum and an average value ≈ 1.3 × 1012 cm Hz1/2/W.

About the authors

V. M. Bazovkin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

V. S. Varavin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

V. V. Vasil’ev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

A. V. Glukhov

Research and Production Enterprise JSC

Author for correspondence.
Email: gluhov@nzpp.ru
Russian Federation, Vostok, Novosibirsk, 630049

D. V. Gorshkov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

S. A. Dvoretsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

A. P. Kovchavtsev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Author for correspondence.
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

Yu. S. Makarov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

D. V. Marin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

I. V. Mzhelsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

V. G. Polovinkin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

V. G. Remesnik

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

I. V. Sabinina

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

Yu. G. Sidorov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

G. Yu. Sidorov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

A. S. Stroganov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

A. V. Tsarenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

M. V. Yakushev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

A. V. Latyshev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090


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