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A Megapixel Matrix Photodetector of the Middle Infrared Range
Bazovkin V.M., Varavin V.S., Vasil’ev V.V., Glukhov A.V., Gorshkov D.V., Dvoretsky S.A., Kovchavtsev A.P., Makarov Y.S., Marin D.V., Mzhelsky I.V., Polovinkin V.G., Remesnik V.G., Sabinina I.V., Sidorov Y.G., Sidorov G.Y., Stroganov A.S., Tsarenko A.V., Yakushev M.V., Latyshev A.V.
Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures
Khamidullin K.A., Baliev D.L., Lazarev P.S., Boltar K.O., Polesskiy A.V., Burlakov I.D., Chepurnov E.L., Gusarova N.I., Popov S.V.
To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes
Kholodnov V.A., Burlakov I.D.
Analytical Description of Avalanche Photodiode Characteristics. An Overview: Part II
Burlakov I.D., Filachev A.M., Kholodnov V.A.
InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm
Dudin A.L., Katsavets N.I., Krasovitsky D.M., Kokin S.V., Chaly V.P., Shukov I.V.
Analytical description of avalanche photodiode characteristics. An overview: Part I
Burlakov I.D., Filachev A.M., Kholodnov V.A.
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