A Megapixel Matrix Photodetector of the Middle Infrared Range
- Authors: Bazovkin V.M.1, Varavin V.S.1, Vasil’ev V.V.1, Glukhov A.V.2, Gorshkov D.V.1, Dvoretsky S.A.1, Kovchavtsev A.P.1, Makarov Y.S.1, Marin D.V.1, Mzhelsky I.V.1, Polovinkin V.G.1, Remesnik V.G.1, Sabinina I.V.1, Sidorov Y.G.1, Sidorov G.Y.1, Stroganov A.S.1, Tsarenko A.V.1, Yakushev M.V.1, Latyshev A.V.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Research and Production Enterprise JSC
- Issue: Vol 64, No 9 (2019)
- Pages: 1011-1015
- Section: Article
- URL: https://journals.rcsi.science/1064-2269/article/view/201223
- DOI: https://doi.org/10.1134/S1064226919090043
- ID: 201223
Cite item
Abstract
Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temperature dependence of the reverse current of elements in the 125–300 K range had a characteristic Arrhenius dependence with an activation energy close to the band gap of the semiconductor and was limited by the diffusion component of the current. At a lower temperature, the current was limited by the generation of carriers with the participation of a deep level near the middle of the forbidden band. The histogram of the detectability of the elements of the matrix had the form of a symmetric curve with a maximum and an average value ≈ 1.3 × 1012 cm Hz1/2/W.
Keywords
About the authors
V. M. Bazovkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. S. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. V. Vasil’ev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. V. Glukhov
Research and Production Enterprise JSC
Author for correspondence.
Email: gluhov@nzpp.ru
Russian Federation, Vostok, Novosibirsk, 630049
D. V. Gorshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. P. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
Yu. S. Makarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. V. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. V. Mzhelsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. G. Polovinkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. G. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. V. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
Yu. G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
G. Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. S. Stroganov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. V. Tsarenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. V. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Russian Federation, Novosibirsk, 630090