Enviar artigo por via de e-mail A Megapixel Matrix Photodetector of the Middle Infrared Range
- Autores: Bazovkin V.1, Varavin V.1, Vasil’ev V.1, Glukhov A.2, Gorshkov D.1, Dvoretsky S.1, Kovchavtsev A.1, Makarov Y.1, Marin D.1, Mzhelsky I.1, Polovinkin V.1, Remesnik V.1, Sabinina I.1, Sidorov Y.1, Sidorov G.1, Stroganov A.1, Tsarenko A.1, Yakushev M.1, Latyshev A.1
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Research and Production Enterprise JSC
- Edição: Volume 64, Nº 9 (2019)
- Páginas: 1011-1015
- Seção: Article
- URL: https://journals.rcsi.science/1064-2269/article/view/201223
- DOI: https://doi.org/10.1134/S1064226919090043
- ID: 201223
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Resumo
Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temperature dependence of the reverse current of elements in the 125–300 K range had a characteristic Arrhenius dependence with an activation energy close to the band gap of the semiconductor and was limited by the diffusion component of the current. At a lower temperature, the current was limited by the generation of carriers with the participation of a deep level near the middle of the forbidden band. The histogram of the detectability of the elements of the matrix had the form of a symmetric curve with a maximum and an average value ≈ 1.3 × 1012 cm Hz1/2/W.
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Sobre autores
V. Bazovkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Vasil’ev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Glukhov
Research and Production Enterprise JSC
Autor responsável pela correspondência
Email: gluhov@nzpp.ru
Rússia, Vostok, Novosibirsk, 630049
D. Gorshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
Yu. Makarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
D. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
I. Mzhelsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Polovinkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
I. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Stroganov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Tsarenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: kap@isp.nsc.ru
Rússia, Novosibirsk, 630090
