| Issue |
Title |
File |
| Vol 64, No 11 (2019) |
Celebrating the 100th Birthday of Boris Zakharovich Katsenelenbaum (26.11.1919–26.04.2015) |
(Eng)
|
|
|
| Vol 64, No 9 (2019) |
A Megapixel Matrix Photodetector of the Middle Infrared Range |
(Eng)
|
|
Bazovkin V.M., Varavin V.S., Vasil’ev V.V., Glukhov A.V., Gorshkov D.V., Dvoretsky S.A., Kovchavtsev A.P., Makarov Y.S., Marin D.V., Mzhelsky I.V., Polovinkin V.G., Remesnik V.G., Sabinina I.V., Sidorov Y.G., Sidorov G.Y., Stroganov A.S., Tsarenko A.V., Yakushev M.V., Latyshev A.V.
|
| Vol 64, No 9 (2019) |
Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range |
(Eng)
|
|
Burlakov I.D., Kuznetsov P.A., Moshchev I.S., Boltar K.O., Yakovleva N.I.
|
| Vol 64, No 9 (2019) |
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns |
(Eng)
|
|
Zverev A.V., Suslyakov A.O., Sabinina I.V., Sidorov G.Y., Yakushev M.V., Kuzmin V.D., Varavin V.S., Remesnik V.G., Makarov Y.S., Predein A.V., Gorshkov D.V., Dvoretsky S.A., Vasil’ev V.V., Sidorov Y.G., Latyshev A.V., Kremis I.I.
|
| Vol 64, No 9 (2019) |
Microstructuring of the Surface of High-Resistivity Single-Crystalline Silicon by Chemical Etching |
(Eng)
|
|
Kashuba A.S., Permikina E.V., Golovin S.V., Lakmanova M.R., Pogozheva A.V.
|
| Vol 64, No 9 (2019) |
Photodetector of Shortwave Infrared Range of Format 640 × 512 Elements with Increased Dynamic Range |
(Eng)
|
|
Kuznetsov P.A., Moschev I.S.
|
| Vol 64, No 9 (2019) |
On the Theory of a Photocurrent Burst in an Intrinsic Photoresistor upon Longitudinal and Transverse Illumination |
(Eng)
|
|
Kholodnov V.A.
|
| Vol 64, No 9 (2019) |
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs |
(Eng)
|
|
Iakovleva N.I., Nikonov A., Boltar K.O., Sednev M.V.
|
| Vol 64, No 3 (2019) |
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy |
(Eng)
|
|
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y., Yakushev M.V.
|
| Vol 64, No 3 (2019) |
Investigation of CdHgTe-Based FPA Heterogeneity |
(Eng)
|
|
Davletshin R.V., Lazarev P.S., Nikonov A.V.
|
| Vol 64, No 3 (2019) |
Extension of the Dynamic Range of Short-Wavelength IR FPAs |
(Eng)
|
|
Kuznetsov P.A., Moshchev I.S.
|
| Vol 64, No 3 (2019) |
Implementation of the TDA Digital Mode on a ROIC for Scanning IR FPA |
(Eng)
|
|
Larionov N.A., Moshchev I.S.
|
| Vol 64, No 3 (2019) |
Analysis of Photoelectric Characteristics of UV-Range Focal Plane Arrays |
(Eng)
|
|
Molkov P.I., Baliev D.L.
|
| Vol 64, No 3 (2019) |
Analysis of Multilayer Heteroepitaxial Structures Based on CdHgTe Using Infrared Transmission Spectra |
(Eng)
|
|
Nikonov A.V., Yakovleva N.I.
|
| Vol 64, No 3 (2019) |
Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures |
(Eng)
|
|
Khamidullin K.A., Baliev D.L., Lazarev P.S., Boltar K.O., Polesskiy A.V., Burlakov I.D., Chepurnov E.L., Gusarova N.I., Popov S.V.
|
| Vol 64, No 3 (2019) |
Analysis of the Photoluminescence Spectra of Heterostructures with AlGaAs/GaAs Quantum Wells |
(Eng)
|
|
Yuskaev M.R., Pashkeev D.A., Goncharov V.E., Nikonov A.V., Egorov A.V.
|
| Vol 64, No 3 (2019) |
Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures |
(Eng)
|
|
Iakovleva N.I.
|
| Vol 64, No 3 (2019) |
Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm |
(Eng)
|
|
Boltar K.O., Irodov N.A., Sednev M.V., Marmalyuk A.A., Ladugin M.A., Ryaboshtan Y.L.
|
| Vol 64, No 3 (2019) |
Effect of the Spread of the Depths of p–n Junction on the Parameters of InGaAs/InP Avalanche Photodiodes |
(Eng)
|
|
Budtolaev A.K., Khakuashev P.E., Chinareva I.V.
|
| Vol 63, No 9 (2018) |
To Our Readers |
(Eng)
|
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