Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures

Abstract

The surface recombination rates for p-type HgCdTe layers with different dopant concentrations and trap densities N_t are calculated. It is shown that, at the given initial parameters, the surface recombination rate S_max lies in the range of 10–10⁴ cm/s. The current sensitivity for p-type HgCdTe is simulated using the dependence of quantum efficiency in the approximation of large lifetimes τ_n0 and large diffusion lengths L_n of minority charge carriers, taking into account the effect of the surface recombination rate.