Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy
- Authors: Voitsekhovskii A.V.1, Nesmelov S.N.1, Dzyadukh S.M.1, Dvoretsky S.A.1,2, Mikhailov N.N.2, Sidorov G.Y.2, Yakushev M.V.2
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Affiliations:
- National Research Тomsk State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 64, No 3 (2019)
- Pages: 289-293
- Section: Article
- URL: https://journals.rcsi.science/1064-2269/article/view/200501
- DOI: https://doi.org/10.1134/S1064226919030197
- ID: 200501
Cite item
Abstract
The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first time in a wide range of frequencies and temperatures. The electron concentration in the near-surface film layer was determined by capacitive measurements and is close to the indium dopant concentration. It was demonstrated that the CV characteristics of MIS systems have a high-frequency behavior in a wide range of measurement conditions, and the product of the differential resistance of the space-charge region and the electrode area in the strong inversion mode is as high as 40 kΩ cm2. It was found that the capacitance of the MIS system in the accumulation mode decreases after irradiation at 0.91 μm. This effect may be attributed to the transformation of the band diagram of an abrupt heterojunction triggered by changes in the charge state of defects under irradiation.
About the authors
A. V. Voitsekhovskii
National Research Тomsk State University
Author for correspondence.
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050
S. N. Nesmelov
National Research Тomsk State University
Email: ifp@isp.nsc.ru
Russian Federation, Tomsk, 634050
S. M. Dzyadukh
National Research Тomsk State University
Email: ifp@isp.nsc.ru
Russian Federation, Tomsk, 634050
S. A. Dvoretsky
National Research Тomsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: ifp@isp.nsc.ru
Russian Federation, Tomsk, 634050; Novosibirsk, 630090
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: ifp@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
G. Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: ifp@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. V. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: ifp@isp.nsc.ru
Russian Federation, Novosibirsk, 630090