| Шығарылым |
Атауы |
Файл |
| Том 64, № 11 (2019) |
Celebrating the 100th Birthday of Boris Zakharovich Katsenelenbaum (26.11.1919–26.04.2015) |
(Eng)
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| Том 64, № 9 (2019) |
Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range |
(Eng)
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Burlakov I., Kuznetsov P., Moshchev I., Boltar K., Yakovleva N.
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| Том 64, № 9 (2019) |
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns |
(Eng)
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Zverev A., Suslyakov A., Sabinina I., Sidorov G., Yakushev M., Kuzmin V., Varavin V., Remesnik V., Makarov Y., Predein A., Gorshkov D., Dvoretsky S., Vasil’ev V., Sidorov Y., Latyshev A., Kremis I.
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| Том 64, № 9 (2019) |
Microstructuring of the Surface of High-Resistivity Single-Crystalline Silicon by Chemical Etching |
(Eng)
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Kashuba A., Permikina E., Golovin S., Lakmanova M., Pogozheva A.
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| Том 64, № 9 (2019) |
Photodetector of Shortwave Infrared Range of Format 640 × 512 Elements with Increased Dynamic Range |
(Eng)
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Kuznetsov P., Moschev I.
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| Том 64, № 9 (2019) |
On the Theory of a Photocurrent Burst in an Intrinsic Photoresistor upon Longitudinal and Transverse Illumination |
(Eng)
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Kholodnov V.
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| Том 64, № 9 (2019) |
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs |
(Eng)
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Iakovleva N., Nikonov A., Boltar K., Sednev M.
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| Том 64, № 9 (2019) |
A Megapixel Matrix Photodetector of the Middle Infrared Range |
(Eng)
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Bazovkin V., Varavin V., Vasil’ev V., Glukhov A., Gorshkov D., Dvoretsky S., Kovchavtsev A., Makarov Y., Marin D., Mzhelsky I., Polovinkin V., Remesnik V., Sabinina I., Sidorov Y., Sidorov G., Stroganov A., Tsarenko A., Yakushev M., Latyshev A.
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| Том 64, № 3 (2019) |
Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm |
(Eng)
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Boltar K., Irodov N., Sednev M., Marmalyuk A., Ladugin M., Ryaboshtan Y.
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| Том 64, № 3 (2019) |
Effect of the Spread of the Depths of p–n Junction on the Parameters of InGaAs/InP Avalanche Photodiodes |
(Eng)
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Budtolaev A., Khakuashev P., Chinareva I.
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| Том 64, № 3 (2019) |
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy |
(Eng)
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Voitsekhovskii A., Nesmelov S., Dzyadukh S., Dvoretsky S., Mikhailov N., Sidorov G., Yakushev M.
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| Том 64, № 3 (2019) |
Investigation of CdHgTe-Based FPA Heterogeneity |
(Eng)
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Davletshin R., Lazarev P., Nikonov A.
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| Том 64, № 3 (2019) |
Extension of the Dynamic Range of Short-Wavelength IR FPAs |
(Eng)
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Kuznetsov P., Moshchev I.
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| Том 64, № 3 (2019) |
Implementation of the TDA Digital Mode on a ROIC for Scanning IR FPA |
(Eng)
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Larionov N., Moshchev I.
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| Том 64, № 3 (2019) |
Analysis of Photoelectric Characteristics of UV-Range Focal Plane Arrays |
(Eng)
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Molkov P., Baliev D.
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| Том 64, № 3 (2019) |
Analysis of Multilayer Heteroepitaxial Structures Based on CdHgTe Using Infrared Transmission Spectra |
(Eng)
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Nikonov A., Yakovleva N.
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| Том 64, № 3 (2019) |
Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures |
(Eng)
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Khamidullin K., Baliev D., Lazarev P., Boltar K., Polesskiy A., Burlakov I., Chepurnov E., Gusarova N., Popov S.
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| Том 64, № 3 (2019) |
Analysis of the Photoluminescence Spectra of Heterostructures with AlGaAs/GaAs Quantum Wells |
(Eng)
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Yuskaev M., Pashkeev D., Goncharov V., Nikonov A., Egorov A.
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| Том 64, № 3 (2019) |
Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures |
(Eng)
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Iakovleva N.
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| Том 63, № 9 (2018) |
To Our Readers |
(Eng)
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| Нәтижелер 20 - 1/20 |
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