Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures


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Abstract

The results of the development and testing of a short-wave IR (0.9–1.7 μm) camera with the first Russian-produced 320 × 256 focal plane array (FPA) are detailed. This FPA was designed based on an InGaAs/InP heterostructure and has a pixel pitch of 30 μm and a suppressed temperature dependence of sensitivity. The primary components and parameters of the camera are discussed. Its advantages and possible applications both as a component of multispectral optoelectronic systems and as an independent device are reviewed.

About the authors

K. A. Khamidullin

AO NPO Orion

Email: mail@shvabe.com
Russian Federation, Moscow, 111538

D. L. Baliev

AO NPO Orion

Email: mail@shvabe.com
Russian Federation, Moscow, 111538

P. S. Lazarev

AO NPO Orion

Email: mail@shvabe.com
Russian Federation, Moscow, 111538

K. O. Boltar

AO NPO Orion; Moscow Institute of Physics and Technology (State University)

Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, Moscow, 111538; Dolgoprudnyi, Moscow oblast, 141700

A. V. Polesskiy

AO NPO Orion

Email: mail@shvabe.com
Russian Federation, Moscow, 111538

I. D. Burlakov

AO NPO Orion; MIREA – Russian Technological University

Email: mail@shvabe.com
Russian Federation, Moscow, 111538; Moscow, 119454

E. L. Chepurnov

AO NPO Orion

Email: mail@shvabe.com
Russian Federation, Moscow, 111538

N. I. Gusarova

АО Shvabe

Author for correspondence.
Email: mail@shvabe.com
Russian Federation, Moscow, 129366

S. V. Popov

АО Shvabe

Email: mail@shvabe.com
Russian Federation, Moscow, 129366


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