作者的详细信息
Parnes, Ya.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
卷 51, 编号 3 (2017) | Physics of Semiconductor Devices | AlN/GaN heterostructures for normally-off transistors |