| 期 |
栏目 |
标题 |
文件 |
| 卷 51, 编号 1 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion of interstitial magnesium in dislocation-free silicon |
|
| 卷 51, 编号 6 (2017) |
Physics of Semiconductor Devices |
On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects |
|
| 卷 51, 编号 8 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
High-temperature diffusion of magnesium in dislocation-free silicon |
|
| 卷 53, 编号 3 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon |
|
| 卷 53, 编号 6 (2019) |
Electronic Properties of Semiconductors |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |
|
