作者的详细信息

Fedorov, V. V.

栏目 标题 文件
卷 52, 编号 4 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential
卷 52, 编号 14 (2018) Infrared Microwave Phenomena in Nanostructures Effect of the Conductive Channel Cut-Off on Operation of n+nn+ GaN NW-Based Gunn Diode
卷 52, 编号 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires
卷 52, 编号 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
卷 53, 编号 14 (2019) Nanostructures Characterization Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes
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