作者的详细信息
Stepanov, S. I.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 7 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates | |
| 卷 53, 编号 6 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy |