作者的详细信息
Rogl, P.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 7 (2016) | Electronic Properties of Semiconductors | Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor | |
卷 51, 编号 2 (2017) | Electronic Properties of Semiconductors | Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y | |
卷 52, 编号 3 (2018) | Electronic Properties of Semiconductors | Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |