Автор туралы ақпарат
Rogl, P.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 7 (2016) | Electronic Properties of Semiconductors | Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor | |
Том 51, № 2 (2017) | Electronic Properties of Semiconductors | Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y | |
Том 52, № 3 (2018) | Electronic Properties of Semiconductors | Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |