Informaçao sobre o Autor
Rogl, P.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 7 (2016) | Electronic Properties of Semiconductors | Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor | |
Volume 51, Nº 2 (2017) | Electronic Properties of Semiconductors | Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y | |
Volume 52, Nº 3 (2018) | Electronic Properties of Semiconductors | Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |