作者的详细信息
Asryan, L. V.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 5 (2016) | Physics of Semiconductor Devices | Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers | |
卷 50, 编号 10 (2016) | Physics of Semiconductor Devices | Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling | |
卷 51, 编号 2 (2017) | Physics of Semiconductor Devices | Specific features of waveguide recombination in laser structures with asymmetric barrier layers | |
卷 51, 编号 7 (2017) | Physics of Semiconductor Devices | Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers | |
卷 52, 编号 12 (2018) | Physics of Semiconductor Devices | Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers | |
卷 52, 编号 14 (2018) | Lasers and Optoelectronic Devices | A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers |