作者的详细信息
Shtel’makh, K. F.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Si:Si LEDs with room-temperature dislocation-related luminescence | |
卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Electroluminescence properties of LEDs based on electron-irradiated p-Si | |
卷 51, 编号 9 (2017) | Electronic Properties of Semiconductors | Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon |