作者的详细信息
Serenkov, I.
期 | 栏目 | 标题 | 文件 |
卷 53, 编号 2 (2019) | Electronic Properties of Semiconductors | Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions | |
卷 53, 编号 2 (2019) | Spectroscopy, Interaction with Radiation | Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions | |
卷 53, 编号 4 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |