作者的详细信息
Gajiev, G. M.
期 | 栏目 | 标题 | 文件 |
卷 51, 编号 3 (2017) | Physics of Semiconductor Devices | Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure | |
卷 53, 编号 12 (2019) | Electronic Properties of Semiconductors | On the Characteristic Features of the Impurity Energy Spectrum in Arsenides |