Автор туралы ақпарат
Gajiev, G. M.
Шығарылым | Бөлім | Атауы | Файл |
Том 51, № 3 (2017) | Physics of Semiconductor Devices | Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure | |
Том 53, № 12 (2019) | Electronic Properties of Semiconductors | On the Characteristic Features of the Impurity Energy Spectrum in Arsenides |