作者的详细信息
Kolodeznyi, E. S.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 10 (2016) | Physics of Semiconductor Devices | On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm | |
卷 52, 编号 8 (2018) | Physics of Semiconductor Devices | Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength | |
卷 52, 编号 9 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures | |
卷 53, 编号 3 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser | |
卷 53, 编号 8 (2019) | Physics of Semiconductor Devices | Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |