Автор туралы ақпарат
Kolodeznyi, E. S.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 10 (2016) | Physics of Semiconductor Devices | On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm | |
Том 52, № 8 (2018) | Physics of Semiconductor Devices | Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength | |
Том 52, № 9 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures | |
Том 53, № 3 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser | |
Том 53, № 8 (2019) | Physics of Semiconductor Devices | Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |