作者的详细信息
Schöner, A.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 1 (2016) | Physics of Semiconductor Devices | Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide | |
卷 50, 编号 6 (2016) | Physics of Semiconductor Devices | Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |