Author Details
Schöner, A.
Issue | Section | Title | File |
Vol 50, No 1 (2016) | Physics of Semiconductor Devices | Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide | |
Vol 50, No 6 (2016) | Physics of Semiconductor Devices | Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |