Автор туралы ақпарат
Schöner, A.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 1 (2016) | Physics of Semiconductor Devices | Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide | |
Том 50, № 6 (2016) | Physics of Semiconductor Devices | Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |