作者的详细信息
Romanov, A.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 4 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy | |
卷 50, 编号 7 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |