| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
|
| 卷 50, 编号 10 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |
|
| 卷 50, 编号 13 (2016) |
Materials for Electronic Engineering |
Interaction of electromagnetic radiation with magnetically functionalized CNT nanocomposite in the subterahertz frequency range |
|
| 卷 50, 编号 13 (2016) |
Microelectronic and Nanoelectronic Technology |
Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface |
|
| 卷 50, 编号 13 (2016) |
Nanotechnology |
Nanostructured current sources based on carbon nanotubes excited by β radiation |
|
| 卷 50, 编号 13 (2016) |
Nanotechnology |
Formation of carbon nanotubes on an amorphous Ni25Ta58N17 alloy film by chemical vapor deposition |
|
| 卷 51, 编号 2 (2017) |
Surfaces, Interfaces, and Thin Films |
Influence of the doping type and level on the morphology of porous Si formed by galvanic etching |
|
| 卷 51, 编号 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures |
|
| 卷 51, 编号 9 (2017) |
Physics of Semiconductor Devices |
Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation |
|
