作者的详细信息
Nashchekin, A.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 7 (2016) | Physics of Semiconductor Devices | Electrochemical lithiation of silicon with varied crystallographic orientation | |
卷 51, 编号 1 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Surface texture of single-crystal silicon oxidized under a thin V2O5 layer | |
卷 52, 编号 13 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations | |
卷 53, 编号 4 (2019) | Physics of Semiconductor Devices | Formation of Porous Silicon by Nanopowder Sintering |