期 |
栏目 |
标题 |
文件 |
卷 50, 编号 2 (2016) |
Physics of Semiconductor Devices |
Si:Si LEDs with room-temperature dislocation-related luminescence |
|
卷 50, 编号 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride |
|
卷 52, 编号 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
|
卷 52, 编号 7 (2018) |
Spectroscopy, Interaction with Radiation |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
|
卷 52, 编号 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
|
卷 53, 编号 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
|