作者的详细信息
Marichev, A. E.
期 | 栏目 | 标题 | 文件 |
卷 52, 编号 13 (2018) | Physics of Semiconductor Devices | GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) | |
卷 53, 编号 11 (2019) | Surfaces, Interfaces, and Thin Films | Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |