Автор туралы ақпарат
Marichev, A. E.
Шығарылым | Бөлім | Атауы | Файл |
Том 52, № 13 (2018) | Physics of Semiconductor Devices | GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) | |
Том 53, № 11 (2019) | Surfaces, Interfaces, and Thin Films | Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |