Edge Doping in Graphene Devices on SiO2 Substrates
- 作者: Vasilyeva G.1, Smirnov D.2, Vasilyev Y.1, Greshnov A.1, Haug R.2
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隶属关系:
- Ioffe Institute
- Institut für Festkórperphysik, Lebniz Universitat Hannover
- 期: 卷 53, 编号 12 (2019)
- 页面: 1672-1676
- 栏目: Carbon Systems
- URL: https://journals.rcsi.science/1063-7826/article/view/207400
- DOI: https://doi.org/10.1134/S1063782619160292
- ID: 207400
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详细
The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.
作者简介
G. Vasilyeva
Ioffe Institute
Email: a_greshnov@hotmail.ru
俄罗斯联邦, St. Petersburg, 194021
D. Smirnov
Institut für Festkórperphysik, Lebniz Universitat Hannover
Email: a_greshnov@hotmail.ru
德国, Hannover, D-30167
Yu. Vasilyev
Ioffe Institute
Email: a_greshnov@hotmail.ru
俄罗斯联邦, St. Petersburg, 194021
A. Greshnov
Ioffe Institute
编辑信件的主要联系方式.
Email: a_greshnov@hotmail.ru
俄罗斯联邦, St. Petersburg, 194021
R. Haug
Institut für Festkórperphysik, Lebniz Universitat Hannover
Email: a_greshnov@hotmail.ru
德国, Hannover, D-30167