Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity
- 作者: Garibova S.1,2, Isayev A.1, Mekhtiyeva S.1, Atayeva S.1
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隶属关系:
- Institute of Physics, Azerbaijan National Academy of Sciences
- Department of Physics and Electronics, Khazar University
- 期: 卷 53, 编号 11 (2019)
- 页面: 1507-1510
- 栏目: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/207305
- DOI: https://doi.org/10.1134/S1063782619110071
- ID: 207305
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详细
The local structure of film samples of the chalcogenide glassy semiconductors Se95As5 and Se95As5(EuF3)x (x = 0.01–1 at %) are studied by X-ray diffraction and Raman scattering. The “quasiperiod” of the structure, the correlation length, the structural elements, and the chemical bonds, which form the amorphous matrix of the investigated materials, are determined. The obtained results are interpreted within the framework of the Elliott void–cluster model taking into account the chemical activity of europium ions.
作者简介
S. Garibova
Institute of Physics, Azerbaijan National Academy of Sciences; Department of Physics and Electronics, Khazar University
编辑信件的主要联系方式.
Email: sqaribova@rambler.ru
阿塞拜疆, Baku, Az-1143; Baku, Az-1096
A. Isayev
Institute of Physics, Azerbaijan National Academy of Sciences
Email: sqaribova@rambler.ru
阿塞拜疆, Baku, Az-1143
S. Mekhtiyeva
Institute of Physics, Azerbaijan National Academy of Sciences
Email: sqaribova@rambler.ru
阿塞拜疆, Baku, Az-1143
S. Atayeva
Institute of Physics, Azerbaijan National Academy of Sciences
Email: sqaribova@rambler.ru
阿塞拜疆, Baku, Az-1143