Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity
- Authors: Garibova S.N.1,2, Isayev A.I.1, Mekhtiyeva S.I.1, Atayeva S.U.1
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Affiliations:
- Institute of Physics, Azerbaijan National Academy of Sciences
- Department of Physics and Electronics, Khazar University
- Issue: Vol 53, No 11 (2019)
- Pages: 1507-1510
- Section: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/207305
- DOI: https://doi.org/10.1134/S1063782619110071
- ID: 207305
Cite item
Abstract
The local structure of film samples of the chalcogenide glassy semiconductors Se95As5 and Se95As5(EuF3)x (x = 0.01–1 at %) are studied by X-ray diffraction and Raman scattering. The “quasiperiod” of the structure, the correlation length, the structural elements, and the chemical bonds, which form the amorphous matrix of the investigated materials, are determined. The obtained results are interpreted within the framework of the Elliott void–cluster model taking into account the chemical activity of europium ions.
About the authors
S. N. Garibova
Institute of Physics, Azerbaijan National Academy of Sciences; Department of Physics and Electronics, Khazar University
Author for correspondence.
Email: sqaribova@rambler.ru
Azerbaijan, Baku, Az-1143; Baku, Az-1096
A. I. Isayev
Institute of Physics, Azerbaijan National Academy of Sciences
Email: sqaribova@rambler.ru
Azerbaijan, Baku, Az-1143
S. I. Mekhtiyeva
Institute of Physics, Azerbaijan National Academy of Sciences
Email: sqaribova@rambler.ru
Azerbaijan, Baku, Az-1143
S. U. Atayeva
Institute of Physics, Azerbaijan National Academy of Sciences
Email: sqaribova@rambler.ru
Azerbaijan, Baku, Az-1143