Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer
- 作者: Banshchikov A.1, Illarionov Y.1,2, Vexler M.1, Wachter S.2, Sokolov N.1
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隶属关系:
- Ioffe Institute
- Vienna University of Technology
- 期: 卷 53, 编号 6 (2019)
- 页面: 833-837
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206374
- DOI: https://doi.org/10.1134/S1063782619060034
- ID: 206374
如何引用文章
详细
The currents flowing in metal–CaF2–n-Si and metal–SiO2–CaF2–n-Si structures with the same (about 1.5 nm) fluoride thickness are compared in the reverse-bias mode. It is revealed that the current in the case of a two-layer dielectric can be notably higher within a certain voltage range. Such unexpected behavior is associated with the coexistence of both electron and hole components of the current as well as with the configuration of the SiO2–CaF2 barrier through which tunneling occurs. The results of measurements and explanatory simulation data are presented.
作者简介
A. Banshchikov
Ioffe Institute
Email: vexler@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
Yu. Illarionov
Ioffe Institute; Vienna University of Technology
Email: vexler@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; Vienna, A-1040
M. Vexler
Ioffe Institute
编辑信件的主要联系方式.
Email: vexler@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Wachter
Vienna University of Technology
Email: vexler@mail.ioffe.ru
奥地利, Vienna, A-1040
N. Sokolov
Ioffe Institute
Email: vexler@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021