Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd– n  + – n -Si Diffusion Silicon Structures

A. E. Belyaev; N. S. Boltovets; V. P. Klad’ko; N. V. Safryuk-Romanenko; A. I. Lubchenko; V. N. Sheremet; V. V. Shynkarenko; A. S. Slepova; V. A. Pilipenko; T. V. Petlitskaya; A. S. Pilipchuk; R. V. Konakova; A. V. Sachenko

doi:10.1134/S1063782619040055

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n⁺–n-Si Diffusion Silicon Structures

作者: Belyaev A.¹, Boltovets N.², Klad’ko V.¹, Safryuk-Romanenko N.¹, Lubchenko A.¹, Sheremet V.¹, Shynkarenko V.¹, Slepova A.², Pilipenko V.³, Petlitskaya T.³, Pilipchuk A.⁴, Konakova R.¹, Sachenko A.¹
隶属关系:
1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
2. State Enterprise Research Institute “Orion”
3. OAO “INTEGRAL”—Holding Management Company
4. Institute of Physics, National Academy of Sciences of Ukraine
期: 卷 53, 编号 4 (2019)
页面: 469-476
栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
URL: https://journals.rcsi.science/1063-7826/article/view/205950
DOI: https://doi.org/10.1134/S1063782619040055
ID: 205950

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The temperature dependences of the specific contact resistance of silicon ρ_c with a doping step are measured experimentally and described theoretically. The measurements are performed in the temperature range from 4.2 to 380 K. It is established that the contacts of the studied Au–Ti–Pd–n⁺–n-Si structures are ohmic. It is shown that minimal ρ_c is implemented at T = 75 K. Its value rises both with a decrease in temperature (due to the freezing effect) and with an increase in temperature (due to the electron-enriched layer at the boundary with the bulk material). It is established that the bulk electron concentration strongly decreases in the near-contact region in a layer with a thickness on the order of one micron due to the compensation of silicon by deep acceptors appearing because of the formation of a rather high vacancy concentration during stress relaxation and the appearance of a high dislocation density, as well as due to their diffusion from the contact after heating to 450°C. The data on the occurrence of vacancy-type defects are confirmed by X-ray measurements. The dislocation density in the studied structures is also estimated from X-ray measurements.

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Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n⁺–n-Si Diffusion Silicon Structures

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详细

作者简介

A. Belyaev

N. Boltovets

V. Klad’ko

N. Safryuk-Romanenko

A. Lubchenko

V. Sheremet

V. Shynkarenko

A. Slepova

V. Pilipenko

T. Petlitskaya

A. Pilipchuk

R. Konakova

A. Sachenko

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures

全文:

详细

作者简介

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n⁺–n-Si Diffusion Silicon Structures