Отправить статью по E-mail Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures
- Авторы: Belyaev A.1, Boltovets N.2, Klad’ko V.1, Safryuk-Romanenko N.1, Lubchenko A.1, Sheremet V.1, Shynkarenko V.1, Slepova A.2, Pilipenko V.3, Petlitskaya T.3, Pilipchuk A.4, Konakova R.1, Sachenko A.1
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Учреждения:
- Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
- State Enterprise Research Institute “Orion”
- OAO “INTEGRAL”—Holding Management Company
- Institute of Physics, National Academy of Sciences of Ukraine
- Выпуск: Том 53, № 4 (2019)
- Страницы: 469-476
- Раздел: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205950
- DOI: https://doi.org/10.1134/S1063782619040055
- ID: 205950
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Аннотация
The temperature dependences of the specific contact resistance of silicon ρc with a doping step are measured experimentally and described theoretically. The measurements are performed in the temperature range from 4.2 to 380 K. It is established that the contacts of the studied Au–Ti–Pd–n+–n-Si structures are ohmic. It is shown that minimal ρc is implemented at T = 75 K. Its value rises both with a decrease in temperature (due to the freezing effect) and with an increase in temperature (due to the electron-enriched layer at the boundary with the bulk material). It is established that the bulk electron concentration strongly decreases in the near-contact region in a layer with a thickness on the order of one micron due to the compensation of silicon by deep acceptors appearing because of the formation of a rather high vacancy concentration during stress relaxation and the appearance of a high dislocation density, as well as due to their diffusion from the contact after heating to 450°C. The data on the occurrence of vacancy-type defects are confirmed by X-ray measurements. The dislocation density in the studied structures is also estimated from X-ray measurements.
Об авторах
A. Belyaev
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
N. Boltovets
State Enterprise Research Institute “Orion”
Email: shynkarenko@gmail.com
Украина, Kyiv, 03057
V. Klad’ko
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
N. Safryuk-Romanenko
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
A. Lubchenko
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
V. Sheremet
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
V. Shynkarenko
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Автор, ответственный за переписку.
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
A. Slepova
State Enterprise Research Institute “Orion”
Email: shynkarenko@gmail.com
Украина, Kyiv, 03057
V. Pilipenko
OAO “INTEGRAL”—Holding Management Company
Email: shynkarenko@gmail.com
Белоруссия, Minsk, 220108
T. Petlitskaya
OAO “INTEGRAL”—Holding Management Company
Email: shynkarenko@gmail.com
Белоруссия, Minsk, 220108
A. Pilipchuk
Institute of Physics, National Academy of Sciences of Ukraine
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
R. Konakova
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
A. Sachenko
Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Email: shynkarenko@gmail.com
Украина, Kyiv, 03028
