On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method
- 作者: Levin R.1, Nevedomskyi V.1, Bazhenov N.1, Zegrya G.1, Pushnyi B.1, Mizerov M.2
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隶属关系:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences
- 期: 卷 53, 编号 2 (2019)
- 页面: 260-263
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/205774
- DOI: https://doi.org/10.1134/S1063782619020155
- ID: 205774
如何引用文章
详细
The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5.0 μm (0.25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.
作者简介
R. Levin
Ioffe Institute
编辑信件的主要联系方式.
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Nevedomskyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Bazhenov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Zegrya
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
B. Pushnyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Mizerov
Submicron Heterostructures for Microelectronics Research and Engineering Center,Russian Academy of Sciences
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021