On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method
- Autores: Levin R.1, Nevedomskyi V.1, Bazhenov N.1, Zegrya G.1, Pushnyi B.1, Mizerov M.2
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Afiliações:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences
- Edição: Volume 53, Nº 2 (2019)
- Páginas: 260-263
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/205774
- DOI: https://doi.org/10.1134/S1063782619020155
- ID: 205774
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Resumo
The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5.0 μm (0.25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.
Sobre autores
R. Levin
Ioffe Institute
Autor responsável pela correspondência
Email: Lev@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021
V. Nevedomskyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021
N. Bazhenov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021
G. Zegrya
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021
B. Pushnyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021
M. Mizerov
Submicron Heterostructures for Microelectronics Research and Engineering Center,Russian Academy of Sciences
Email: Lev@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021