On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method
- Авторлар: Levin R.1, Nevedomskyi V.1, Bazhenov N.1, Zegrya G.1, Pushnyi B.1, Mizerov M.2
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Мекемелер:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences
- Шығарылым: Том 53, № 2 (2019)
- Беттер: 260-263
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/205774
- DOI: https://doi.org/10.1134/S1063782619020155
- ID: 205774
Дәйексөз келтіру
Аннотация
The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5.0 μm (0.25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.
Авторлар туралы
R. Levin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
V. Nevedomskyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
N. Bazhenov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
G. Zegrya
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
B. Pushnyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
M. Mizerov
Submicron Heterostructures for Microelectronics Research and Engineering Center,Russian Academy of Sciences
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021